View MPSA94_1282840.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

UNISONIC TECHNOLOGIES CO., LTD MPSA94
PNP EPITAXIAL SILICON TRANSISTOR
HIGH VOLTAGE TRANSISTOR
1
FEATURES
* Collector-Emitter voltage: VCEO=-400V * Collector Dissipation: PD(MAX)=625mW * Low collector-Emitter saturation voltage
SOT-89
1 TO-92
*Pb-free plating product number: MPSA94L
ORDERING INFORMATION
Order Number Normal Lead Free Plating MPSA94-AB3-F-R MPSA94-AB3-F-R MPSA94-T92-C-B MPSA94-T92-C-B MPSA94-T92-C-K MPSA94-T92-C-K Package SOT-89 TO-92 TO-92 Pin Assignment 1 2 3 B C E E B C E B C Packing Tape Reel Tape Box Bulk
MPSA94L-AB3-F-R
(1)Packing Type (2)Pin Assignment (3)Package Type (4)Lead Plating
(1) B: Tape Box, K: Bulk, R: Tape Reel (2) refer to Pin Assignment (3) T92: TO-92, AB3: SOT-89 (4) L: Lead Free Plating, Blank: Pb/Sn
www.unisonic.com.tw Copyright (c) 2005 Unisonic Technologies Co., Ltd
1 of 3
QW-R201-021,B
MPSA94
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage
PNP EPITAXIAL SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING (Operating temperature range applies unless otherwise specified)
UNIT V V V TO-92 mW Collector Power Dissipation(Ta=25) PD SOT-89 W Collector Current IC mA Junction Temperature TJ +150 Storage Temperature TSTG -40 ~ +150 Note Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. SYMBOL VCBO VCEO VEBO RATINGS -400 -400 -6 625 0.5 -300
ELECTRICAL CHARACTERISTICS (TJ=25, unless otherwise specified)
PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current TEST CONDITIONS IC=-100A, IE=0 IC=-1mA, IB=0 IC=-100A, VBE=0 IE=-100A, IC=0 VCB=-300V, IE=0 VCB=-400V, VBE=0 VEB=-4V, IC=0 VCE=-10V, IC=-1mA VCE=-10V, IC=-10mA DC Current Gain(note) hFE VCE=-10V, IC=-50mA VCE=-10V, IC=-100mA IC=-10mA, IB=-1mA Collector-Emitter Saturation Voltage VCE(SAT) Ic=-50mA, IB=-5mA Base-Emitter Saturation Voltage VBE(SAT) IC=-10mA, IB=-1mA Output Capacitance Cob VCB=-20V, IE=0, f=1MHz Note: Pulse test: PW<300s, Duty Cycle<2% SYMBOL BVCBO BVCEO BVCES BVEBO ICBO ICES IEBO MIN -400 -400 -400 -5 TYP MAX UNIT V V V V -100 nA -1 A 100 nA 300
60 70 70 40
-0.20 -0.5 -0.75 7
V V pF
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R201-021,B
MPSA94
TYPICAL CHARACTERISTICS
DC Current Gain 1000 VCE=-10V
PNP EPITAXIAL SILICON TRANSISTOR
Base-Emitter Saturation Voltage -10
DC Current Gain, hFE
10
VBE(SAT) (V)
100
-1.0
I C=10*I B
-0.1
1
-1
-10 -100 -1000 Collector Current, IC (mA)
-0.01
-1
-10 -100 -1000 Collector Current, IC (mA)
Collector-Emitter Saturation Voltage
Collector Output Capacitance
I C=10*I B
Collector Output Capacitance (pF)
-10
1000 I E=0, f=1MHz 100
VCE(SAT) (V)
-1.0
-0.1
10
-0.01
-1
-10 -100 Collector Current, I C (mA)
1
-0.1
-1 -10 -100 Collector Base Voltage (V)
UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 3
QW-R201-021,B

▲Up To Search▲

Price & Availability of MPSA94

	To Download MPSA94 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .